III-Nitride Electronic Devices
| By: | Author |
| Publisher: | Elsevier S & T |
| Print ISBN: | 9780128175446 |
| eText ISBN: | 9780128175453 |
| Edition: | 0 |
| Copyright: | 2019 |
| Format: | Reflowable |
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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.
- Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics
- Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies
- Written by a panel of academic and industry experts in each field